2011. 4. 4 1/3 semiconductor technical data 2N7002KA n channel mosfet esd protected 2000v revision no : 1 interface and switching application. features h esd protected 2000v. h high density cell design for low r ds(on) . h voltage controlled small signal switch. h rugged and reliable. h high saturation current capablity. maximum rating (ta=25 ? ) dim millimeters 1. source 2. gate 3. drain sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss v gs =0v, i d =10 a 60 - - v zero gate voltage drain current i dss v ds =60v, v gs =0v - - 1 a gate-body leakage, forward i gssf v gs =20v, v ds =0v - - 10 a gate-body leakage, reverse i gssr v gs =-20v, v ds =0v - - -10 a esd-capability* - c=100pf, r=1.5k ? both forward and reverse direction 3 pulse 2000 - - v 7 9 u ua p equivalent circuit characteristic symbol rating unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v drain current continuous i d 300 ma pulsed (note 1) i dp 1200 drain power dissipation (note 2) p d 350 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? note 1) pulse width ? 10 k , duty cycle ? 1% note 2) package mounted on 99% alumina 10 ? 8 ? 0.6mm *failure cirterion : i dss > 1 a at v ds =60v, i gssf >10 a at v gs =20v, i gssr >-10 a at v gs =-20v.
2011. 4. 4 2/3 2N7002KA revision no : 1 v dd r l v out t on t off t r t f t d(on) v out v in output pulse width inverted input t d(off) 90% 10% 10% 50% 50% 90% 90% v in v gs g s d electrical characteristics (ta=25 ? ) on characteristics (note 3) characteristic symbol test condition min. typ. max. unit gate threshold voltage v th v ds =v gs , i d =250 a 1.1 - 2.35 v drain-source on resistance r ds(on) v gs =10v, i d =500ma - - 2.3 ? v gs =5v, i d =50ma - 1.7 2.7 drain-source diode forward voltage v sd v gs =0v, i s =200ma (note 1) - - 1.15 v dynamic characteristics switching time test circuit note 3 ) pulse test : pulse width ? 80 k , duty cycle ? 1% characteristic symbol test condition min. typ. max. unit input capacitance c iss v ds =25v, v gs =0v, f=1 ? - 18.0 - pf reverse transfer capacitance c rss - 3.0 - output capacitance c oss - 7.0 - switching time turn-on time t on v dd =30v, r l =155 ? , i d =190 v , v gs =10v - 15 - ns turn-off time t off - 40 -
2011. 4. 4 3/3 2N7002KA revision no : 1 drain-source voltage v (v) drain current i (a) d 0 ds 0 i - v dds 1 common source ta=25 c v =3v gs 2345 0.3 0.6 0.9 1.5 1.2 4v 5v 6v 7v 10v 0.1 0 0.2 common source ta=25 c 0.3 0.4 0.5 0.6 2 1 3 4 6 5 drain source on- resistancer r ds(on) ( ?) drain current i (a) d r - i ds(on) d 0.0 0.5 common source v ds =v gs i d =250 a 1.5 1.0 2.0 2.5 junction temperature t ( c) j v - t th j capacitance c (pf) drain-source voltage v (v) ds c - v ds 1 0.0 100 10 1000 0.3 0.6 0.9 1.2 1.5 ciss coss crss 050100 -50 150 v gs =3v 6v 7v 5v 10v 4v 0 200 100 300 400 500 drain power dissipation p d (mw ) ambient temperature t ( c) a p - t da 050 75 100 125 150 25 175 normalized gate source threshold voltage vth (v)
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